I ~ .. 1 1.. ,. 28 Comparison oJ noise levels obtained in the Jour test structures. 3. 2. Firstly the noise dependence on rise/fall time of the signal at the inverter input is obtained. As could be expected, noise decreases when transitions are slowed down, in all three types of transistors. 29 shows the results obtained for pair C, although the dependence obtained for the other transistors is similar.
E. coupling from the bipolar to the MOS transistor, or the other way round. For every situation, we will consider the bipolar transistor common-emitter or common-collector biased. 1. a. Common-emitter biasing. 20. 5 ns typical of this technology. This transition drives the transistor from cutoff state to saturation, producing a highto-Iow transient at the collector. The noise waveforms obtained show a maximum peak of 30 mV (55 mV pp ). lm apart, and the same type of substrate biasing. e. the noise produced by a switching bipolar transistor is at least an order of magnitude higher.
9 :ic. •. ••. -------- ..... •. _•••.. 30 Coupled noise dependence on the distance between devices. 36 CHAPTER 2. 4. 1. Some concepts of noise conduction in silicon Like other conductors, silicon displays three different behavior regimes depending on the frequency of the electric field applied : • slow-wave regime • skin-effect regime • dielectric regime Each of these regimes will now be analyzed. The current density due to a number of carriers Ne is J = Neqv = aE Eq. :....
Analysis and Solutions for Switching Noise Coupling in Mixed-Signal ICs by Xavier Aragonès, José Luis González, Antonio Rubio (auth.)